Details

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BUY FP50R12KT4 https://www.utsource.net/itm/p/12597235.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	1200	V
Gate-Source Voltage	VGS	-15	-	15	V
Continuous Drain Current	ID	-	50	-	A
Pulse Drain Current (tp = 10 渭s, ICM = 50 A)	IDM	-	150	-	A
Power Dissipation (TC = 25掳C)	PD	-	1800	-	W
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	RthJC	-	0.25	-	K/W
Total Gate Charge	QG	-	390	-	nC
Input Capacitance	Ciss	-	2800	-	pF
Output Capacitance	Coss	-	240	-	pF
Reverse Transfer Capacitance	Crss	-	200	-	pF

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Handle with care to avoid mechanical damage or electrostatic discharge (ESD).

2. Mounting:

   • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
   • Use a thermal interface material (TIM) between the device and the heat sink for optimal thermal performance.

3. Electrical Connections:

   • Connect the gate and source terminals carefully to avoid short circuits.
   • Use short leads to minimize parasitic inductance, which can affect high-frequency performance.

4. Operational Considerations:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Monitor the junction temperature to ensure it does not exceed 175掳C.
   • For pulse operation, ensure that the pulse duration and frequency are within the specified limits to avoid overheating.

5. Testing:

   • Perform initial testing at low power levels to verify correct operation.
   • Use appropriate test equipment to measure parameters such as V_CE, I_D, and Q_G.

6. Safety:

   • Always follow safety guidelines when handling high-voltage and high-current components.
   • Use protective gear and ensure proper grounding to prevent electrical shock.

(For reference only)