Details

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BUY FQP8N80C https://www.utsource.net/itm/p/12597240.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Drain-Source Voltage	VDS	-80	-	80	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	16	16	A	@ TC = 25°C
Pulse Drain Current	ID(p)	-	32	32	A	@ TC = 25°C, tp = 10 μs, Duty Cycle = 1%
Power Dissipation	PTOT	-	-	190	W	@ TC = 25°C
Junction Temperature	TJ	-	-	175	°C
Storage Temperature	TSTG	-65	-	150	°C

Instructions for Use:

1. Handling Precautions:

   • The FQP8N80C is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
   • Avoid exceeding the maximum ratings specified in the table to prevent damage to the device.

2. Mounting:

   • Ensure that the device is securely mounted to a heatsink if operating at high power levels to maintain junction temperature within safe limits.
   • Use thermal compound between the device and heatsink to improve heat transfer.

3. Gate Drive:

   • Apply a gate-source voltage (V_GS) within the specified range to turn the MOSFET on or off.
   • For optimal performance, use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).

4. Operating Conditions:

   • Monitor the drain current (I_D) and ensure it does not exceed the continuous or pulse ratings depending on the application.
   • Keep the junction temperature (T_J) below the maximum rating to avoid thermal runaway and potential failure.

5. Testing:

   • When testing the device, use a controlled environment to simulate actual operating conditions.
   • Verify that the device meets the specified electrical characteristics under these conditions.

6. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Follow recommended storage temperature ranges to prevent degradation.

For more detailed information, refer to the datasheet provided by the manufacturer.

(For reference only)