Details

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BUY IDH08SG60CXKSA2 https://www.utsource.net/itm/p/12597419.html

Parameter	Description	Value	Unit
Part Number	Unique identifier for the component	IDH08SG60CXKSA2	-
Type	Type of device	MOSFET	-
Packaging	Packaging type	Surface Mount (SMD)	-
Polarity	Device polarity	N-Channel	-
Drain Source Voltage	Maximum voltage between drain and source	600	V
Continuous Drain Current	Maximum continuous current through the drain-source path at 25°C	8	A
Rds(on)	On-state resistance at specified conditions	140	mΩ
Gate Charge	Total gate charge	65	nC
Power Dissipation	Maximum power dissipation	3.7	W
Junction Temperature	Maximum operating junction temperature	150	°C
Storage Temperature	Temperature range for storage	-55 to 150	°C
Operating Temperature	Temperature range for operation	-40 to 125	°C

Instructions:

1. Handling Precautions: Use appropriate ESD protection measures when handling the device to prevent damage from static electricity.
2. Mounting: Ensure proper mounting on a PCB using recommended soldering profiles to avoid thermal and mechanical stress.
3. Testing: Before integrating into final designs, test the device under specified operating conditions to ensure it meets performance requirements.
4. Storage: Store in a dry, cool environment within the specified storage temperature range to maintain device integrity.
5. Application: Refer to the datasheet for detailed application notes and circuit design recommendations.

(For reference only)