Details

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BUY 315-5216 https://www.utsource.net/itm/p/12597425.html

Parameter	Value
Part Number	315-5216
Description	Phototransistor
Type	NPN Silicon
Collector-Emitter Voltage (Vce)	30 V
Emitter-Collector Voltage (Vec)	5 V
Collector Current (Ic)	50 mA
Base Current (Ib)	10 渭A
Photocurrent (Iph)	0.1 - 10 渭A (Typical)
Dark Current (Idark)	< 0.1 nA (Typical)
Spectral Range	450 - 650 nm
Operating Temperature	-40掳C to +85掳C
Storage Temperature	-55掳C to +150掳C
Package Type	TO-18

Instructions for Use:

1. Handling Precautions:

   • Handle the phototransistor with care to avoid static damage.
   • Use appropriate ESD protection measures when handling the device.

2. Mounting:

   • Ensure that the leads are not bent too close to the body of the phototransistor to prevent mechanical stress.
   • Soldering temperature should not exceed 260掳C and should be completed within 10 seconds.

3. Circuit Design:

   • Connect the collector to the positive supply voltage and the emitter to ground through a load resistor.
   • The base is typically left floating or connected to a bias circuit if needed.
   • Ensure that the photocurrent does not exceed the maximum collector current rating to avoid damage.

4. Optical Considerations:

   • Position the phototransistor such that it is exposed to the desired light source.
   • Use appropriate filters or lenses to control the spectral range and intensity of the light.

5. Testing:

   • Measure the collector-emitter voltage and collector current to verify proper operation.
   • Test the dark current to ensure it is within the specified range.

6. Storage:

   • Store the phototransistor in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

(For reference only)