Details

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BUY ZTX696B https://www.utsource.net/itm/p/12597534.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	800	V	IC = 150 mA, TA = 25掳C
Emitter-Collector Voltage	VECS	-	-	800	V	IC = 150 mA, TA = 25掳C
Collector-Base Voltage	VCBO	-	-	800	V	IB = 0, TA = 25掳C
Base-Emitter Voltage	VBE	-	1.8	2.5	V	IC = 150 mA, TA = 25掳C
Collector Current	IC	-	-	150	mA	VCE = 30 V, TA = 25掳C
Base Current	IB	-	-	15	mA	VCE = 30 V, TA = 25掳C
Power Dissipation	PT	-	-	1000	mW	TA = 25掳C
Operating Temperature	TA	-40	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat dissipation if operating at high currents or temperatures.
   • Use a heatsink if necessary to keep the junction temperature within safe limits.

2. Biasing:

   • Apply base current (I_B) to control the collector current (I_C).
   • Ensure that the base-emitter voltage (V_BE) does not exceed the maximum rating.

3. Voltage Ratings:

   • Do not exceed the maximum collector-emitter voltage (V_CEO), emitter-collector voltage (V_ECS), or collector-base voltage (V_CBO).

4. Current Handling:

   • The maximum collector current (I_C) is 150 mA. Ensure that the circuit design does not exceed this limit.
   • The maximum base current (I_B) is 15 mA. Exceeding this can damage the transistor.

5. Power Dissipation:

   • The power dissipation (P_T) should not exceed 1000 mW to avoid overheating.

6. Temperature Considerations:

   • The operating temperature range is from -40掳C to 150掳C.
   • The storage temperature range is from -55掳C to 150掳C.

7. Handling:

   • Handle with care to avoid mechanical stress or damage.
   • Use appropriate anti-static precautions to prevent damage from electrostatic discharge (ESD).

8. Testing:

   • Before finalizing the circuit, test the transistor under expected operating conditions to ensure it meets the required performance specifications.

(For reference only)