Details

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BUY NT90RNAE24CB https://www.utsource.net/itm/p/12597567.html

Parameter	Description	Value
Part Number	Part identification	NT90RNAE24CB
Type	Device type	N-Channel MOSFET
Package	Package type	TO-252 (DPAK)
VDS (Max)	Drain-to-Source Voltage	30 V
VGS (Max)	Gate-to-Source Voltage	卤20 V
RDS(on)	On-State Resistance at VGS = 10 V	24 m惟
ID (Max)	Continuous Drain Current at TC = 25掳C	8 A
Ptot (Max)	Total Power Dissipation at TA = 25掳C	1.5 W
Tj (Max)	Junction Temperature	150掳C
Tstg	Storage Temperature Range	-65掳C to +150掳C
Qg	Total Gate Charge	25 nC
Qgd	Gate-to-Drain Charge	7.5 nC
td(on)	Turn-on Delay Time	15 ns
tr	Rise Time	25 ns
td(off)	Turn-off Delay Time	15 ns
tf	Fall Time	25 ns

Instructions for Use:

1. Handling and Storage:

   • Store in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent static discharge, which can damage the MOSFET.

2. Mounting:

   • Ensure proper thermal management by using a heatsink if necessary, especially when operating at high currents or in high ambient temperatures.
   • Follow the recommended PCB layout guidelines to minimize parasitic inductance and improve performance.

3. Biasing:

   • Apply the gate voltage (V_GS) within the specified limits to avoid damage.
   • Use appropriate gate drive circuits to ensure fast and reliable switching.

4. Operation:

   • Do not exceed the maximum ratings for V_DS, I_D, and P_tot.
   • Monitor the junction temperature (T_j) to ensure it stays within the safe operating range.

5. Testing:

   • Use a multimeter or an oscilloscope to verify the device parameters before and after installation.
   • Perform functional tests under controlled conditions to ensure the device is operating correctly.

6. Safety:

   • Always follow safety guidelines when working with electrical components.
   • Use appropriate personal protective equipment (PPE) when handling the device.

For detailed application notes and further information, refer to the datasheet provided by the manufacturer.

(For reference only)