Details

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BUY AOD4454 https://www.utsource.net/itm/p/12597593.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	230	-	mΩ	At VGS = 4.5V, ID = 1A
Gate-Source Voltage	VGS(th)	0.6	-	1.2	V	Gate threshold voltage
Continuous Drain Current	ID	-	-	8.5	A	At Ta = 25°C
Pulse Drain Current	IDM	-	-	17	A	Pulse duration ≤ 300μs
Power Dissipation	PD	-	-	0.94	W	At Ta = 25°C
Junction Temperature	TJ	-55	-	150	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	150	°C	Storage temperature range

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid damage.
   • Ensure proper mounting on a suitable heatsink if operating at high power.

2. Biasing Conditions:

   • Apply gate-source voltage (VGS) within the specified limits to ensure reliable operation.
   • For optimal performance, maintain VGS above the threshold voltage.

3. Current Limitations:

   • Do not exceed the continuous drain current (ID) or pulse drain current (IDM) ratings.
   • Account for thermal conditions when determining maximum allowable current.

4. Thermal Management:

   • Monitor junction temperature (TJ) to prevent overheating.
   • Use appropriate cooling methods if operating near the maximum power dissipation (PD).

5. Storage and Environment:

   • Store in recommended environmental conditions to avoid degradation.
   • Protect from moisture and static electricity during storage and handling.

6. Electrical Characteristics:

   • Refer to the parameter table for electrical characteristics and ensure compliance with application requirements.

(For reference only)