Details

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BUY 2SA1306 https://www.utsource.net/itm/p/12597896.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Collector-Emitter Voltage	Vceo	-	-	60	V	Ic = 0, Tc = 25掳C
Collector-Base Voltage	Vcbo	-	-	70	V	Ib = 0, Tc = 25掳C
Emitter-Base Voltage	Vebo	-	-	5	V	Ie = 5 mA, Tc = 25掳C
Collector Current	Ic	-	1.5	2	A	Vce = 10 V, Tc = 25掳C
Base Current	Ib	-	0.15	0.2	A	Vce = 10 V, Ic = 1.5 A, Tc = 25掳C
Power Dissipation	Ptot	-	-	65	W	Ta = 25掳C
Storage Temperature	Tstg	-55	-	150	掳C
Operating Junction Temperature	Tj	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within the specified range.
   • Use a suitable heatsink with thermal compound to enhance heat dissipation.

2. Biasing:

   • Apply the base current (Ib) carefully to avoid exceeding the maximum base current rating.
   • Use a current-limiting resistor in series with the base to prevent overcurrent.

3. Operation:

   • Do not exceed the maximum collector-emitter voltage (Vceo) or collector-base voltage (Vcbo).
   • Keep the power dissipation (Ptot) below the maximum rating to avoid thermal damage.

4. Storage:

   • Store the transistor in a dry, cool place away from direct sunlight.
   • Handle with care to avoid static discharge which can damage the device.

5. Testing:

   • Test the transistor using a multimeter or a dedicated transistor tester to ensure it is functioning correctly.
   • Verify the parameters under the specified conditions to ensure reliable operation.

(For reference only)