Details

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BUY YGW60N65F1A2 https://www.utsource.net/itm/p/12598103.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Breakdown Voltage	V(BR)DSS	-	650	-	V	Drain-to-source breakdown voltage
Continuous Drain Current	ID	-	60	-	A	Continuous drain current at Tc = 25°C
Pulse Drain Current	IDM	-	180	-	A	Pulse drain current (t=10μs, duty 1%)
Gate-Source Voltage	VGS	-10	-	20	V	Maximum gate-to-source voltage
Total Power Dissipation	PD	-	390	-	W	Total power dissipation at Tc = 25°C
Junction Temperature	TJ	-55	-	175	°C	Operating junction temperature range
Storage Temperature	TSTG	-55	-	175	°C	Storage temperature range
Thermal Resistance	RθJC	-	0.4	-	°C/W	Junction to case thermal resistance

Instructions for YGW60N65F1A2:

1. Handling Precautions:

   • Avoid exposing the device to temperatures outside the specified operating and storage ranges.
   • Handle with care to prevent mechanical damage.

2. Installation:

   • Ensure proper heat sinking to manage thermal resistance and maintain optimal performance.
   • Use appropriate mounting hardware and follow manufacturer guidelines for torque specifications.

3. Electrical Connections:

   • Connect the gate terminal through a resistor to limit inrush current and reduce noise.
   • Ensure all connections are secure and insulated as necessary to prevent short circuits.

4. Operation:

   • Operate within the continuous and pulse current ratings to avoid overheating and potential damage.
   • Monitor the junction temperature to ensure it remains within safe limits during operation.

5. Storage:

   • Store in a dry environment within the specified storage temperature range.
   • Protect from static electricity by using anti-static packaging.

6. Testing:

   • Perform initial testing under controlled conditions to verify functionality and performance.
   • Regularly inspect for signs of wear or damage, especially after prolonged use or exposure to extreme conditions.

(For reference only)