Details
BUY 2SK3000 https://www.utsource.net/itm/p/12598119.html
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | V(DS) | 500 | V |
| Gate-Source Voltage | V(GS) | 卤20 | V |
| Drain Current (Continuous) | I(D) | 10 | A |
| Peak Pulse Drain Current | I(DM) | 40 | A |
| Power Dissipation | P(TOT) | 100 | W |
| Junction Temperature | T(J) | -55 to +150 | 掳C |
| Storage Temperature | T(STG) | -55 to +150 | 掳C |
| Thermal Resistance (Junction to Case) | R(胃JC) | 1.25 | 掳C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended mounting torque for screws to avoid damage.
Biasing:
- Apply gate-source voltage (V(GS)) carefully to avoid exceeding 卤20V.
- Ensure that the drain current (I(D)) does not exceed 10A continuously.
Operation:
- Do not operate the device at drain-source voltages (V(DS)) above 500V.
- During pulse operation, ensure peak pulse drain current (I(DM)) does not exceed 40A.
Storage:
- Store the device in a dry, cool place with temperatures between -55掳C and +150掳C.
- Avoid exposure to corrosive environments.
Handling:
- Handle the device with care to avoid mechanical stress.
- Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
Testing:
- Perform all tests under controlled conditions to ensure accurate measurements.
- Refer to the datasheet for detailed test procedures and conditions.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Use appropriate protective equipment and grounding techniques.
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