STF24N60DM2

STF24N60DM2

Category: Transistors

Specifications
Details

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Parameter Symbol Min Typ Max Unit Conditions/Notes
Collector-Emitter Voltage V CES - - 600 V
Collector-Base Voltage V CBO - - 600 V
Emitter-Base Voltage V EBO - - 7.0 V
Continuous Collector Current I CM - 24 - A T C = 25°C
Continuous Collector Current I CM - 15 - A T C = 100°C
Total Device Dissipation P T - - 300 W R θJC = 0.6 K/W
Junction Temperature T J - - 150 °C
Storage Temperature Range T STG -55 - 150 °C

Instructions for Use:

  1. Mounting and Handling: Ensure that the device is handled with care to avoid mechanical damage. Mounting should be done in a way that ensures good thermal contact to dissipate heat effectively.

  2. Electrical Connections: Make sure all electrical connections are secure and properly insulated to prevent short circuits or incorrect polarity connections.

  3. Thermal Management: The maximum junction temperature (T J) must not exceed 150°C. Proper heatsinking is required if operating at high currents or power levels.

  4. Storage and Operating Temperature: The device can operate within a temperature range from -55°C to 150°C. Store the device in a dry, cool place when not in use.

  5. Overload Protection: Design the circuit to include overload protection mechanisms to safeguard against excessive current or voltage spikes.

  6. Compliance and Standards: Ensure that the application complies with relevant safety standards and regulations.

Note: For detailed specifications and more information, refer to the official datasheet provided by STMicroelectronics.

(For reference only)

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