Details

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BUY IRFB4227 https://www.utsource.net/itm/p/12598200.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Continuous Drain Current	ID	-	110	-	A	@ Tc = 25掳C, VGS = 10V
Pulse Drain Current	IDpeak	-	360	-	A	@ Tc = 25掳C, t = 10渭s, VGS = 10V
Gate-Source Voltage	VGS	-10	-	20	V	-
Drain-Source Breakdown Voltage	VDS(BR)	55	-	60	V	@ ID = 250渭A, VGS = 0V
Gate-Source Leakage Current	IGSS	-	-	卤100	nA	@ VGS = 卤20V, Tj = 25掳C
Drain-Source On-State Resistance	RDS(on)	-	1.9	-	m惟	@ VGS = 10V, ID = 110A, Tj = 25掳C
Gate Charge	QG	-	130	-	nC	-
Input Capacitance	Ciss	-	1850	-	pF	@ VDS = 15V, f = 1MHz
Output Capacitance	Coss	-	520	-	pF	@ VDS = 15V, f = 1MHz
Reverse Transfer Capacitance	Crss	-	120	-	pF	@ VDS = 15V, f = 1MHz
Thermal Resistance, Junction to Case	R胃JC	-	0.55	-	掳C/W	-
Operating Junction Temperature	Tj	-55	-	175	掳C	-
Storage Temperature Range	Tstg	-55	-	175	掳C	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the device to the heatsink.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Ensure the gate-source voltage (VGS) does not exceed the maximum rating of 卤20V.
   • Use short leads to minimize parasitic inductance and capacitance.

3. Operation:

   • Operate within the continuous drain current (ID) and pulse drain current (IDpeak) ratings to avoid overheating.
   • Monitor the junction temperature (Tj) to ensure it stays within the operating range (-55掳C to 175掳C).
   • For high-frequency applications, consider the gate charge (QG) and capacitances (Ciss, Coss, Crss) to optimize switching performance.

4. Storage:

   • Store the device in a dry, cool environment within the storage temperature range (-55掳C to 175掳C).

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the gate oxide.

6. Testing:

   • Use appropriate test equipment and methods to verify the parameters and ensure the device is functioning correctly.

By following these guidelines, you can ensure reliable and efficient operation of the IRFB4227 MOSFET.

(For reference only)