Details

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BUY Q28E20 https://www.utsource.net/itm/p/12598228.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	Q28E20	-
Type	Device Type	MOSFET	-
VDS	Drain-Source Voltage	200	V
VGS	Gate-Source Voltage	卤20	V
ID	Continuous Drain Current	28	A
PTOT	Total Power Dissipation	150	W
RDS(on)	On-State Resistance (VGS=10V)	4.5	m惟
Qg	Total Gate Charge	90	nC
Tj	Junction Temperature Range	-55 to +175	掳C
Package	Housing	TO-247	-

Instructions:

1. Handling:

   • Handle with care to avoid static damage.
   • Use proper ESD protection equipment when handling the device.

2. Mounting:

   • Ensure good thermal management by using appropriate heatsinks.
   • Follow the recommended PCB layout guidelines for optimal performance.

3. Operation:

   • Do not exceed the maximum ratings listed in the table.
   • Ensure the gate-source voltage (V_GS) is within the specified range to prevent damage.
   • Operate the device within the specified temperature range to avoid thermal runaway.

4. Testing:

   • Use a suitable power supply and load to test the device.
   • Measure the on-state resistance (R_DS(on)) to verify proper operation.

5. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Keep away from direct sunlight and sources of heat.

(For reference only)