Details

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BUY G160N60UFD https://www.utsource.net/itm/p/12598245.html

Parameter	Description	Value	Unit
Part Number	Device Identifier	G160N60UFD	-
Type	Device Type	N-Channel MOSFET	-
VDS (Max)	Drain-to-Source Voltage	600	V
VGS (Max)	Gate-to-Source Voltage	卤20	V
ID (Max)	Continuous Drain Current	160	A
PTOT (Max)	Total Power Dissipation	340	W
RDS(on) (Typical)	On-State Resistance at VGS = 10V	2.5	m惟
QG (Total)	Total Gate Charge	320	nC
QGD (Drain)	Gate-to-Drain Charge	100	nC
QGS (Source)	Gate-to-Source Charge	70	nC
td(on)	Turn-On Delay Time	25	ns
tr	Rise Time	45	ns
td(off)	Turn-Off Delay Time	35	ns
tf	Fall Time	60	ns
fT	Transition Frequency	1.8	MHz
Operating Temperature Range	Junction Temperature	-55 to +175	掳C
Storage Temperature Range	Storage Temperature	-65 to +175	掳C
Package	Package Type	TO-247-3L	-

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to manage the high power dissipation.
   • Use a thermal compound between the MOSFET and the heatsink for optimal heat transfer.

2. Biasing:

   • Apply a gate-to-source voltage (V_GS) within the specified range to control the MOSFET.
   • Avoid exceeding the maximum V_GS to prevent damage to the device.

3. Current Handling:

   • Do not exceed the continuous drain current (I_D) rating to avoid overheating and potential failure.
   • Consider derating the current based on ambient temperature and cooling conditions.

4. Switching:

   • Minimize switching losses by ensuring fast turn-on and turn-off times.
   • Use appropriate gate drive circuits to achieve the required switching speeds.

5. Storage and Handling:

   • Store the device in a dry, cool environment within the specified storage temperature range.
   • Handle with care to avoid mechanical damage and static discharge.

6. Testing:

   • Use a suitable test setup to verify the parameters before integrating into the final application.
   • Refer to the datasheet for detailed testing procedures and recommended test conditions.

(For reference only)