Details

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BUY KF13N60N-U/P https://www.utsource.net/itm/p/12598381.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Blocking Voltage	V(BR)DSS	-	-	600	V	Drain-Source Breakdown Voltage
Continuous Drain Current	ID	-	13	-	A	At Tc = 25°C
Total Power Dissipation	PD	-	-	220	W	At Tc = 25°C
Junction Temperature	TJ	-20	-	175	°C	Operating Junction Temperature Range
Storage Temperature	TSTG	-55	-	150	°C	Storage Temperature Range
Gate Charge	Qg	-	42	-	nC	At VGS = ±15V, IDS = 8A
Input Capacitance	Ciss	-	2300	-	pF	At VDS = 300V, f = 1MHz
Output Capacitance	Coff	-	500	-	pF	At VDS = 300V, f = 1MHz

Instructions for Use:

1. Handling Precautions: The KF13N60N-U/P is sensitive to electrostatic discharge (ESD). Handle with appropriate ESD precautions.
2. Mounting: Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within specified limits.
3. Operating Conditions: Operate within the specified voltage and current ratings to avoid damage or reduced performance.
4. Gate Drive: Apply gate voltages within the recommended range to ensure reliable switching performance and prevent damage to the gate oxide.
5. Storage: Store in a dry environment within the specified storage temperature range to avoid degradation.
6. Installation: Follow manufacturer guidelines for PCB layout and component placement to optimize performance and reliability.
7. Testing: Perform initial testing under controlled conditions to verify correct operation before full-scale deployment.

(For reference only)