2N3904

2N3904


Specifications
SKU
12598405
Details

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Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - 40 - V
Collector-Base Voltage VCBO - 60 - V
Emitter-Base Voltage VEBO - 6 - V
Collector Current IC - 200 - mA
Base Current IB - 5 - mA
DC Current Gain hFE 10 300 - -
Transition Frequency fT - 300 - MHz
Power Dissipation PT - 625 - mW
Storage Temperature Range TSTG -55 - 150 掳C
Operating Junction Temperature TJ -65 - 200 掳C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat dissipation by mounting the 2N3904 on a suitable heatsink if operating near its maximum power dissipation.
    • Avoid mechanical stress on the leads, as excessive bending can damage the transistor.
  2. Biasing:

    • Use appropriate biasing circuits to ensure the transistor operates within its safe operating area (SOA).
    • For linear applications, use negative feedback to stabilize the operating point.
  3. Protection:

    • Include a base resistor to limit the base current and prevent damage due to excessive current.
    • Use a flyback diode across inductive loads to protect against voltage spikes.
  4. Storage:

    • Store the 2N3904 in a dry environment to prevent moisture damage.
    • Handle with care to avoid static discharge, which can damage the device.
  5. Testing:

    • Use a multimeter or transistor tester to verify the functionality of the 2N3904 before installation.
    • Check for continuity between the base, collector, and emitter to ensure there are no short circuits.
  6. Soldering:

    • Use a soldering iron with a temperature not exceeding 300掳C to avoid thermal damage.
    • Solder quickly to minimize exposure to high temperatures.
  7. Applications:

    • The 2N3904 is suitable for general-purpose amplification, switching, and low-power signal processing applications.
    • It can be used in audio circuits, logic gates, and other small-signal applications.
(For reference only)

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