Details
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| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Rated Voltage | VDSS | - | 160 | - | V | |
| Continuous Drain Current | ID | - | 7 | - | A | Tc = 25°C |
| Continuous Drain Current | ID | - | 4.9 | - | A | Tc = 85°C |
| Peak Pulse Current | Ipp | - | 35 | - | A | t = 10 μs, Ipp ≤ 5 × ID |
| Gate-Source Voltage | VGS | -10 | 0 | 10 | V | |
| Gate Charge | Qg | - | 10 | - | nC | VGS = 10 V, IDS = 7 A |
| Total Gate Charge | Qgt | - | 16 | - | nC | VGS = 10 V, IDS = 7 A |
| Input Capacitance | Ciss | - | 330 | - | pF | VDS = 160 V, VGS = 0 V |
| Output Capacitance | Coss | - | 130 | - | pF | VDS = 160 V, VGS = 0 V |
| Reverse Transfer Capacitance | Crss | - | 80 | - | pF | VDS = 160 V, VGS = 0 V |
| RDS(on) | RDS(on) | - | 0.06 | - | Ω | VGS = 10 V, ID = 7 A |
| Turn-on Delay Time | td(on) | - | 25 | - | ns | VGS = 10 V, IDS = 7 A, RL = 5 Ω |
| Rise Time | tr | - | 20 | - | ns | VGS = 10 V, IDS = 7 A, RL = 5 Ω |
| Turn-off Delay Time | td(off) | - | 15 | - | ns | VGS = 10 V, IDS = 7 A, RL = 5 Ω |
| Fall Time | tf | - | 10 | - | ns | VGS = 10 V, IDS = 7 A, RL = 5 Ω |
| Power Dissipation | PD | - | 200 | - | W | Tc = 25°C |
| Junction Temperature | TJ | -55 | - | 175 | °C | |
| Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Operating Conditions:
- Ensure that the operating voltage (VDS) does not exceed the rated voltage (160 V).
- The continuous drain current (ID) should not exceed 7 A at 25°C or 4.9 A at 85°C.
- The peak pulse current (Ipp) should be limited to 35 A for pulses of 10 μs duration.
Gate Drive:
- Apply gate-source voltage (VGS) within the range of -10 V to 10 V.
- Ensure the gate charge (Qg) is considered when designing the gate drive circuit.
Thermal Management:
- Maintain the junction temperature (TJ) below 175°C to avoid thermal damage.
- Use appropriate heat sinks or cooling methods to manage power dissipation (PD).
Capacitance Considerations:
- Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in high-frequency applications.
Switching Characteristics:
- Optimize switching times (td(on), tr, td(off), tf) by adjusting gate resistance (RL) and ensuring proper gate drive.
Storage:
- Store the device in a dry environment with temperatures between -55°C and 150°C.
Handling:
- Handle the device with care to avoid static discharge and physical damage.
- Follow ESD (Electrostatic Discharge) precautions during handling and installation.
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