7MBP160VCA060-51

7MBP160VCA060-51


Specifications
SKU
12598445
Details

BUY 7MBP160VCA060-51 https://www.utsource.net/itm/p/12598445.html

Parameter Symbol Min Typical Max Unit Conditions
Rated Voltage VDSS - 160 - V
Continuous Drain Current ID - 7 - A Tc = 25°C
Continuous Drain Current ID - 4.9 - A Tc = 85°C
Peak Pulse Current Ipp - 35 - A t = 10 μs, Ipp ≤ 5 × ID
Gate-Source Voltage VGS -10 0 10 V
Gate Charge Qg - 10 - nC VGS = 10 V, IDS = 7 A
Total Gate Charge Qgt - 16 - nC VGS = 10 V, IDS = 7 A
Input Capacitance Ciss - 330 - pF VDS = 160 V, VGS = 0 V
Output Capacitance Coss - 130 - pF VDS = 160 V, VGS = 0 V
Reverse Transfer Capacitance Crss - 80 - pF VDS = 160 V, VGS = 0 V
RDS(on) RDS(on) - 0.06 - Ω VGS = 10 V, ID = 7 A
Turn-on Delay Time td(on) - 25 - ns VGS = 10 V, IDS = 7 A, RL = 5 Ω
Rise Time tr - 20 - ns VGS = 10 V, IDS = 7 A, RL = 5 Ω
Turn-off Delay Time td(off) - 15 - ns VGS = 10 V, IDS = 7 A, RL = 5 Ω
Fall Time tf - 10 - ns VGS = 10 V, IDS = 7 A, RL = 5 Ω
Power Dissipation PD - 200 - W Tc = 25°C
Junction Temperature TJ -55 - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions for Use:

  1. Operating Conditions:

    • Ensure that the operating voltage (VDS) does not exceed the rated voltage (160 V).
    • The continuous drain current (ID) should not exceed 7 A at 25°C or 4.9 A at 85°C.
    • The peak pulse current (Ipp) should be limited to 35 A for pulses of 10 μs duration.
  2. Gate Drive:

    • Apply gate-source voltage (VGS) within the range of -10 V to 10 V.
    • Ensure the gate charge (Qg) is considered when designing the gate drive circuit.
  3. Thermal Management:

    • Maintain the junction temperature (TJ) below 175°C to avoid thermal damage.
    • Use appropriate heat sinks or cooling methods to manage power dissipation (PD).
  4. Capacitance Considerations:

    • Account for input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss) in high-frequency applications.
  5. Switching Characteristics:

    • Optimize switching times (td(on), tr, td(off), tf) by adjusting gate resistance (RL) and ensuring proper gate drive.
  6. Storage:

    • Store the device in a dry environment with temperatures between -55°C and 150°C.
  7. Handling:

    • Handle the device with care to avoid static discharge and physical damage.
    • Follow ESD (Electrostatic Discharge) precautions during handling and installation.
(For reference only)

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