Details

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BUY STW10N105K5 https://www.utsource.net/itm/p/12598473.html

Parameter	Symbol	Min	Typ	Max	Unit	Description
Drain-Source On-Resistance	RDS(on)	-	0.15	-	Ω	At VGS = 4.5V, ID = 10A
Continuous Drain Current	ID	-	-	10	A	At Tc = 25°C
Pulse Drain Current	Ipp	-	-	30	A	Pulse width ≤ 300 μs, Tc = 25°C
Gate-Source Voltage	VGS(th)	0.8	-	2.0	V	Gate-source threshold voltage
Breakdown Voltage	BVdss	-	-	100	V	Drain-source breakdown voltage
Power Dissipation	PD	-	-	6.7	W	At Tc = 25°C
Junction Temperature	TJ	-25	-	150	°C	Operating junction temperature
Storage Temperature Range	Tstg	-55	-	150	°C	Operating storage temperature

Instructions:

1. Handling and Storage: Store in a dry place away from direct sunlight. Handle with care to avoid damage to the leads or body.
2. Mounting: Ensure proper heat sinking if operating at high currents or power levels to maintain junction temperature within specified limits.
3. Electrical Connections: Connect gate, source, and drain correctly. Use short leads to minimize stray inductance.
4. Biasing: Apply gate-source voltage within the specified range to ensure reliable operation. Avoid exceeding the maximum ratings.
5. Protection: Incorporate protection circuits such as clamping diodes for transient voltage suppression to protect against overvoltage conditions.
6. Testing: During testing, ensure that all parameters are within the specified limits to avoid premature failure or degradation of performance.
7. Derating: For continuous operation at temperatures close to the maximum junction temperature, derate the current and power ratings accordingly.

(For reference only)