Details

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BUY M29W064FB70N3E https://www.utsource.net/itm/p/12598495.html

Parameter	Description	Value	Unit
Device	Device Name	M29W064FB70N3E	-
Technology	Flash Memory Technology	CMOS	-
Memory Density	Total Memory	8 M x 8	bits
Vcc (Operating Voltage)	Supply Voltage Range	2.7 to 3.6	V
Vpp (Programming Voltage)	Programming Voltage	Not Required	-
Ta (Operating Temperature)	Operating Temperature Range	-40 to +85	°C
tPROG (Program Time)	Typical Program Time	10	μs
tSE (Sector Erase Time)	Typical Sector Erase Time	300	ms
tBE (Block Erase Time)	Typical Block Erase Time	300	ms
tCE (Chip Erase Time)	Typical Chip Erase Time	5000	ms
tWP (Write Protect)	Write Protect Pin	Active Low	-
tWPDIS (Write Protect Disable Time)	Write Protect Disable Time	0	μs
tWPEN (Write Protect Enable Time)	Write Protect Enable Time	0	μs
tSU (Setup Time)	Address and Control Input Setup Time	20	ns
tH (Hold Time)	Address and Control Input Hold Time	10	ns
tACC (Access Time)	Access Time	70	ns
tCYC (Cycle Time)	Cycle Time	100	ns
tR (Read Recovery Time)	Read Recovery Time	0	ns
tCHZ (Output High-Z Time)	Output High-Z Time	0	ns
tOE (Output Enable Time)	Output Enable Time	0	ns
tCE# (Chip Enable Time)	Chip Enable Time	0	ns
tCE#H (Chip Enable High Time)	Chip Enable High Time	0	ns
tCE#L (Chip Enable Low Time)	Chip Enable Low Time	0	ns
tWP# (Write Protect Time)	Write Protect Time	0	ns
tWP#H (Write Protect High Time)	Write Protect High Time	0	ns
tWP#L (Write Protect Low Time)	Write Protect Low Time	0	ns
tBYTE (Byte Write Time)	Byte Write Time	10	μs
tSECTOR (Sector Erase Time)	Sector Erase Time	300	ms
tBLOCK (Block Erase Time)	Block Erase Time	300	ms
tCHIP (Chip Erase Time)	Chip Erase Time	5000	ms

Instructions:

1. Power Supply:

   • Ensure the supply voltage (Vcc) is within the range of 2.7V to 3.6V.
   • No external programming voltage (Vpp) is required.

2. Temperature:

   • The device operates reliably within the temperature range of -40°C to +85°C.

3. Programming:

   • Use the typical program time of 10 μs for byte writes.
   • For sector erase, use the typical time of 300 ms.
   • For block erase, use the typical time of 300 ms.
   • For chip erase, use the typical time of 5000 ms.

4. Timing Parameters:

   • Ensure all setup and hold times are met for reliable operation.
   • The access time is 70 ns, and the cycle time is 100 ns.

5. Write Protect:

   • The write protect pin (WP#) is active low. Set it high to disable write protection.

6. Addressing:

   • Address inputs must be stable during the setup and hold times.

7. Output Control:

   • Use the output enable (OE#) pin to control the output state.

8. Chip Enable:

   • Use the chip enable (CE#) pin to select the device.

9. Data Sheet:

   • Refer to the detailed data sheet for more specific information and advanced features.

(For reference only)