Details

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BUY MMF60R190QTH https://www.utsource.net/itm/p/12598497.html

Parameter	Symbol	Value	Unit	Test Conditions
Maximum Drain-to-Source Voltage	VDS(max)	600	V	-
Maximum Gate-to-Source Voltage	VGS(max)	卤20	V	-
Continuous Drain Current	ID	190	A	TC = 25掳C
Pulse Drain Current	IDM	380	A	tp = 10 渭s, IDM/ID = 2
Power Dissipation	PTOT	2100	W	TC = 25掳C
Junction Temperature	TJ	-55 to +175	掳C	-
Storage Temperature Range	TSTG	-55 to +150	掳C	-
Thermal Resistance, Junction to Case	R胃JC	0.25	K/W	-
Total Gate Charge	QG	400	nC	VGS = 15 V, ID = 190 A
Input Capacitance	Ciss	5000	pF	VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	250	pF	VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	1200	pF	VDS = 400 V, f = 1 MHz

Instructions for Use:

1. Mounting and Handling:

   • Ensure proper heat sinking to manage thermal resistance.
   • Handle with care to avoid static damage.

2. Electrical Connections:

   • Connect the drain (D) to the high-voltage supply.
   • Connect the source (S) to the load or ground.
   • Apply gate (G) signals carefully to avoid exceeding V_GS(max).

3. Operating Conditions:

   • Do not exceed the maximum ratings for voltage, current, and power dissipation.
   • Monitor junction temperature to ensure it remains within the specified range.

4. Storage:

   • Store in a dry, cool place within the storage temperature range.
   • Avoid exposure to extreme temperatures and humidity.

5. Testing:

   • Use appropriate test conditions as specified in the parameter table.
   • Ensure all measurements are taken under controlled conditions to avoid damaging the device.

6. Safety:

   • Follow all safety guidelines when handling high-voltage and high-current circuits.
   • Use protective equipment as necessary.

(For reference only)