Details

---

BUY STD70N10F4 https://www.utsource.net/itm/p/12598556.html

Parameter	Symbol	Value	Unit
Maximum Drain Current	ID	70	A
Maximum Drain-Source Voltage	VDS	100	V
Maximum Gate-Source Voltage	VGS	卤20	V
Maximum Power Dissipation	PD	250	W
Junction Temperature	TJ	-55 to 150	掳C
Storage Temperature Range	TSTG	-55 to 150	掳C
Continuous Drain Current (Tc=25掳C)	ID(25掳C)	70	A
Continuous Drain Current (Tc=100掳C)	ID(100掳C)	49	A
RDS(on) at VGS=10V, ID=35A	RDS(on)	3.5	m惟
Total Gate Charge	Qg	160	nC
Input Capacitance	Ciss	5300	pF
Output Capacitance	Coss	1800	pF
Reverse Transfer Capacitance	Crss	1200	pF

Instructions for Use:

1. Handling and Storage:

   • Store the device in a dry, cool place.
   • Handle with care to avoid static discharge, which can damage the MOSFET.

2. Mounting:

   • Ensure proper heat sinking to manage the maximum power dissipation.
   • Use a thermal compound between the device and the heatsink for better thermal conductivity.

3. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Apply a suitable gate voltage (VGS) to control the drain current (ID).

4. Operating Conditions:

   • Do not exceed the maximum ratings for drain current, drain-source voltage, and power dissipation.
   • Operate within the specified temperature range to ensure reliable performance.

5. Testing:

   • Use appropriate test equipment to measure parameters such as RDS(on), Qg, and capacitances.
   • Follow standard testing procedures to avoid damaging the device.

6. Safety:

   • Always disconnect the power supply before making any connections or modifications.
   • Use protective equipment when handling high-voltage circuits.

(For reference only)