Details

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BUY 2MBI75U4A-120-50/75A1200V https://www.utsource.net/itm/p/12598587.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Rated Voltage	VDS	-	1200	-	V
Continuous Drain Current (Tc=25°C)	ID	-	75	-	A
Continuous Drain Current (Tc=100°C)	ID	-	50	-	A
Pulse Drain Current (10ms, 1Hz)	IDM	-	300	-	A
Gate-Source Voltage	VGS	-15	0	15	V
Drain-Source On-State Resistance	RDS(on)	-	7.5	-	mΩ	@ VGS=15V, ID=75A, TJ=25°C
Total Gate Charge	QG	-	120	-	nC
Input Capacitance	Ciss	-	4500	-	pF	@ VDS=600V, f=1MHz
Output Capacitance	Coss	-	250	-	pF	@ VDS=600V, f=1MHz
Reverse Transfer Capacitance	Crss	-	180	-	pF	@ VDS=600V, f=1MHz
Junction to Case Thermal Resistance	RθJC	-	0.5	-	°C/W
Storage Temperature Range	Tstg	-55	-	150	°C
Operating Temperature Range	TJ	-55	-	150	°C

Instructions:

1. Mounting and Handling:

   • Ensure that the device is mounted on a heatsink with adequate thermal conductivity.
   • Use appropriate handling techniques to avoid damage from electrostatic discharge (ESD).

2. Biasing and Operation:

   • Apply the gate-source voltage (V_GS) within the specified range (-15V to +15V).
   • Ensure the drain current (I_D) does not exceed the rated values for continuous and pulse conditions.

3. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it remains within the operating temperature range (-55°C to 150°C).
   • Use the junction-to-case thermal resistance (R_θJC) to calculate the required heatsink size.

4. Capacitance Considerations:

   • Account for the input (C_iss), output (C_oss), and reverse transfer (C_rss) capacitances in your circuit design to minimize switching losses and ensure stable operation.

5. Storage:

   • Store the device in a dry, cool environment within the storage temperature range (-55°C to 150°C).

6. Testing:

   • When testing the device, ensure all parameters are within the specified limits to avoid damage or premature failure.

(For reference only)