Details

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BUY SC338IMSTR https://www.utsource.net/itm/p/12599454.html

Parameter	Description	Value
Part Number	Component Identifier	SC338IMSTR
Type	Device Type	MOSFET
Package	Enclosure or Case Type	TO-252 (DPAK)
Polarity	Polarity of the Device	N-Channel
VDS	Drain-to-Source Voltage	60 V
VGS	Gate-to-Source Voltage	卤20 V
RDS(on)	On-State Resistance at VGS = 10 V	30 m惟
ID	Continuous Drain Current	12 A
PD	Power Dissipation	3.5 W
TJ	Junction Temperature Range	-55掳C to 150掳C
fSW	Switching Frequency	500 kHz
Qg	Total Gate Charge	19 nC
Qgd	Gate-to-Drain Charge	4.7 nC
Qgs	Gate-to-Source Charge	8.7 nC
td(on)	Turn-On Delay Time	25 ns
td(off)	Turn-Off Delay Time	15 ns
tr	Rise Time	25 ns
tf	Fall Time	25 ns
Storage Temp.	Storage Temperature Range	-65掳C to 150掳C

Instructions for Use:

1. Mounting: Ensure proper heat sinking when mounting the device to maintain the junction temperature within the specified range.
2. Soldering: Use a temperature-controlled soldering iron and avoid excessive heat to prevent damage to the device.
3. Handling: Handle with care to avoid mechanical stress on the leads and body.
4. Electrostatic Discharge (ESD) Protection: Use appropriate ESD protection measures during handling and installation.
5. Gate Drive: Ensure that the gate drive circuit provides sufficient voltage and current to fully turn on the MOSFET and minimize switching losses.
6. Thermal Management: Monitor the device temperature during operation and ensure adequate cooling to prevent overheating.
7. Storage: Store in a dry, cool place to prevent moisture damage.

(For reference only)