Details

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BUY FQP13N50C https://www.utsource.net/itm/p/12599481.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	500	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current	ID	-	13	-	A	TC = 25掳C
Pulse Drain Current	IDpeak	-	45	-	A	tp = 10 ms, IG = 0.5 A
Power Dissipation	PTOT	-	-	150	W	TC = 25掳C
Junction Temperature	TJ	-	-	175	掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Total Gate Charge	QG	-	90	-	nC
Input Capacitance	Ciss	-	1300	-	pF	VDS = 25 V, f = 1 MHz
Output Capacitance	Coss	-	100	-	pF	VDS = 25 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	20	-	pF	VDS = 25 V, f = 1 MHz
Threshold Gate Voltage	VGS(th)	2.0	4.0	6.0	V	ID = 250 渭A, TA = 25掳C
On-State Resistance	RDS(on)	-	1.8	-	惟	VGS = 10 V, ID = 13 A, TA = 25掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the FQP13N50C with care to avoid static discharge damage.
   • Ensure that the device is not exposed to temperatures outside its storage range.

2. Mounting:

   • Use appropriate heat sinks to manage power dissipation and keep the junction temperature within safe limits.
   • Ensure proper mechanical alignment during mounting to avoid stress on the leads.

3. Electrical Connections:

   • Connect the gate to a low impedance source to minimize noise and ensure stable operation.
   • Use bypass capacitors close to the power supply pins to filter out high-frequency noise.

4. Thermal Management:

   • Monitor the junction temperature to prevent overheating, especially under continuous load conditions.
   • Use thermal paste between the device and the heat sink to improve thermal conductivity.

5. Gate Drive:

   • Apply gate voltages within the specified range to avoid damaging the device.
   • Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.

6. Overcurrent Protection:

   • Implement overcurrent protection to prevent damage from excessive drain current.
   • Consider using a current-limiting resistor or a current-sensing circuit.

7. Storage and Transportation:

   • Store the device in a dry, cool place away from direct sunlight.
   • Follow ESD (Electrostatic Discharge) guidelines during transportation and handling.

(For reference only)