Details

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BUY STL210N4F7 https://www.utsource.net/itm/p/12599495.html

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Drain-Source Voltage	VDSS		-		450	V
Gate-Source Voltage	VGS		-		±20	V
Continuous Drain Current	ID	TC = 25°C	-	10.6	-	A
		TC = 70°C	-	8.2	-	A
Pulse Drain Current	IDM	t = 10ms, Rep Rate = 5	-	36	-	A
Gate Charge	Qg	VGS = 10V	-	95	-	nC
Input Capacitance	Ciss	VDS = 0V, f = 1MHz	-	2100	-	pF
Output Capacitance	Coss	VDS = 400V, f = 1MHz	-	370	-	pF
Reverse Transfer Capacitance	Crss	VDS = 400V, f = 1MHz	-	560	-	pF
Threshold Voltage	VGS(th)	ID = 1mA	2.0	2.5	3.0	V
On-State Resistance	RDS(on)	VGS = 10V, ID = 10A	-	0.18	-	Ω

Instructions for Use:

1. Handling Precautions: The STL210N4F7 is sensitive to electrostatic discharge (ESD). Use proper ESD protection measures during handling and installation.
2. Operating Temperature: Ensure the operating temperature does not exceed the specified limits. Ambient temperatures should be controlled to prevent overheating.
3. Voltage Ratings: Do not exceed the maximum ratings for drain-source voltage (VDSS) and gate-source voltage (VGS) to avoid damage to the device.
4. Current Handling: Operate within the continuous and pulse drain current ratings. Exceeding these can lead to device failure or reduced lifespan.
5. Gate Drive: Ensure the gate drive circuitry provides sufficient voltage to fully turn on the device and minimize on-state resistance.
6. Thermal Management: Adequate heat sinking is recommended, especially when operating at high currents or in high ambient temperatures.
7. Capacitance Considerations: Account for input, output, and reverse transfer capacitances in your design to ensure stable operation and avoid unwanted oscillations.

(For reference only)