Details

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BUY STP3NK90Z https://www.utsource.net/itm/p/12599516.html

Parameter	Symbol	Min	Typical	Max	Unit	Notes
Drain-Source Voltage	VDS	-	-	900	V
Gate-Source Voltage	VGS	-15	-	20	V
Continuous Drain Current	ID	-	3.0	-	A	TC = 25掳C
Pulse Drain Current	ID(p)	-	8.0	-	A	tp = 10 渭s, IG = 10 A
Power Dissipation	PD	-	-	140	W	TC = 25掳C
Junction Temperature	TJ	-55	-	175	掳C
Storage Temperature	TSTG	-55	-	175	掳C
Total Device Weight	-	-	-	3.5	g

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain the junction temperature within specified limits.
   • Use a thermal interface material (TIM) between the device and the heatsink for optimal thermal performance.

2. Biasing:

   • Apply gate-source voltage (V_GS) within the range of -15V to +20V to ensure reliable operation.
   • Avoid exceeding the maximum gate-source voltage to prevent damage to the device.

3. Current Handling:

   • Do not exceed the continuous drain current (I_D) of 3.0A at 25掳C case temperature.
   • For pulse applications, do not exceed 8.0A for a pulse duration of 10 渭s with a gate current of 10A.

4. Thermal Management:

   • Monitor the junction temperature (T_J) to ensure it does not exceed 175掳C.
   • Store the device in an environment where the temperature ranges from -55掳C to 175掳C.

5. Handling:

   • Handle the device with care to avoid mechanical stress or damage.
   • Use appropriate ESD protection when handling to prevent electrostatic discharge damage.

6. Testing:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • Refer to the datasheet for detailed testing procedures and recommended test circuits.

(For reference only)