Details

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BUY HEF4502BT https://www.utsource.net/itm/p/12599523.html

Parameter	Description
Device Type	Dual 4-input NAND Gate
Package Type	DIP, SOIC
Supply Voltage (VDD)	3V to 15V
Input Voltage (VIH)	Min: 70% VDD, Max: VDD
Output Voltage (VOH)	Min: 90% VDD, Max: VDD
Propagation Delay Time (tpd)	Max: 28ns @ VDD=10V, Max: 65ns @ VDD=5V
Power Dissipation (PD)	Max: 100mW per package
Operating Temperature Range	-40掳C to +85掳C
Storage Temperature Range	-65掳C to +150掳C

Instructions for Use:

1. Power Supply Connection: Connect the positive supply voltage (VDD) to pin 14 and ground (GND) to pin 7.
2. Input Connections: Connect input signals to pins 1, 2, 3, 4 for the first gate and pins 5, 6, 12, 13 for the second gate.
3. Output Connections: Outputs are available on pins 8 for the first gate and pin 9 for the second gate.
4. Handling Precautions: This device is sensitive to electrostatic discharge (ESD). Handle with care and use proper ESD protection measures.
5. Decoupling Capacitors: Place a decoupling capacitor close to the power supply pins to reduce noise and improve stability.
6. Signal Levels: Ensure that all input signals comply with the specified VIH and VIL levels to avoid undefined behavior.
7. Unused Inputs: If not all inputs are used, tie unused inputs to VDD or GND as appropriate to prevent floating conditions which can cause unpredictable operation.

(For reference only)