Details

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BUY MPSA05 https://www.utsource.net/itm/p/12599541.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCE	-	-	300	V	-
Emitter-Base Voltage	VEB	-5	-	5	V	-
Collector-Base Voltage	VCB	-	-	300	V	-
Collector Current	IC	-	-	100	mA	-
Base Current	IB	-	-	10	mA	-
DC Current Gain	hFE	25	100	400	-	IC = 10mA, VCE = 10V
Transition Frequency	fT	-	3	-	MHz	-
Storage Temperature	TSTG	-65	-	150	掳C	-
Operating Junction Temperature	TJ	-65	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the MPSA05 to temperatures outside the specified storage range.
   • Handle the device with care to prevent mechanical damage.

2. Biasing and Operation:

   • Ensure that the collector-emitter voltage (V_CE) does not exceed 300V.
   • The emitter-base voltage (V_EB) should be kept within 卤5V.
   • The collector current (I_C) should not exceed 100mA.
   • The base current (I_B) should be limited to 10mA or less.

3. Thermal Management:

   • Operate the device within the specified junction temperature range (-65掳C to 150掳C).
   • Use appropriate heat sinks if necessary to manage thermal dissipation.

4. Testing and Measurement:

   • When measuring the DC current gain (h_FE), use the conditions I_C = 10mA and V_CE = 10V.
   • For accurate transition frequency (f_T) measurements, refer to the typical value of 3MHz.

5. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Follow ESD (Electrostatic Discharge) precautions during handling and storage.

6. Mounting:

   • Solder the device quickly to avoid overheating the junction.
   • Ensure proper alignment and orientation during soldering to avoid short circuits.

7. Applications:

   • Suitable for general-purpose switching and amplification applications.
   • Ideal for use in low-power circuits where high voltage capability is required.

(For reference only)