Details

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BUY 2SK369 https://www.utsource.net/itm/p/12599575.html

Parameter	Symbol	Min	Typ	Max	Unit
Drain-Source Voltage	V(DS)	-	-	500	V
Gate-Source Voltage	V(GS)	-20	-	10	V
Drain Current	I(D)	-	-	1	A
Transconductance	gfs	-	10	-	mS
Input Capacitance	Ciss	-	450	-	pF
Output Capacitance	Coss	-	10	-	pF
Reverse Transfer	Crss	-	10	-	pF
Junction Temperature	Tj	-	-	175	掳C
Storage Temperature	Tstg	-55	-	150	掳C

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature below 175掳C.
   • Use appropriate mounting hardware to secure the device.

2. Biasing:

   • Apply gate-source voltage (V(GS)) within the range of -20V to +10V.
   • Ensure drain-source voltage (V(DS)) does not exceed 500V.

3. Operation:

   • Do not exceed the maximum drain current (I(D)) of 1A.
   • Monitor the power dissipation to prevent overheating.

4. Storage:

   • Store the device in a dry, cool place with temperatures between -55掳C and 150掳C.

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Follow ESD (Electrostatic Discharge) precautions to prevent damage to the device.

6. Testing:

   • Use appropriate test equipment to verify parameters such as transconductance (gfs), input capacitance (Ciss), output capacitance (Coss), and reverse transfer capacitance (Crss).

7. Applications:

   • Suitable for high-frequency switching applications, power amplifiers, and other high-voltage circuits.

(For reference only)