Details

---

BUY MMBT3646 https://www.utsource.net/itm/p/12600018.html

Parameter	Value	Unit
Type	NPN Silicon Transistor	-
Package	SOT-23	-
Collector-Emitter Voltage (Vceo)	40	V
Collector-Base Voltage (Vcbo)	60	V
Emitter-Base Voltage (Vebo)	5	V
Continuous Collector Current (Ic)	200	mA
Power Dissipation (Ptot)	310	mW
DC Current Gain (hFE)	100 to 300	-
Transition Frequency (ft)	300	MHz
Operating Temperature Range	-55 to +150	掳C

Instructions for Use:

1. Handling: Handle the MMBT3646 with care to avoid damage from electrostatic discharge (ESD). Use appropriate anti-static precautions.
2. Mounting: Ensure correct orientation during mounting. Refer to the pin configuration diagram provided by the manufacturer.
3. Soldering: Use a temperature-controlled soldering iron and ensure not to exceed the maximum soldering temperature of 260掳C for more than 10 seconds per connection.
4. Storage: Store in a dry, cool place and use within the recommended shelf life to ensure optimal performance.
5. Applications: Suitable for general-purpose switching and amplification applications where small size and high efficiency are required.

(For reference only)