CY6N137

CY6N137


Specifications
Details

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Parameter Description Value
Device Type High-Speed CMOS 3-State Buffer
Supply Voltage (Vcc) Operating Supply Voltage 2.0 V to 5.5 V
Input Voltage (VIH) High-Level Input Voltage Vcc - 0.4 V
Input Voltage (VIL) Low-Level Input Voltage 0.4 V
Output Voltage (VOH) High-Level Output Voltage Vcc - 0.4 V
Output Voltage (VOL) Low-Level Output Voltage 0.4 V
Propagation Delay (tPD) Time from input edge to output edge 1.5 ns (typical at Vcc = 5V)
Power Dissipation Maximum Power Consumption 6.8 mW (typical at Vcc = 5V, TA = 25掳C)
Operating Temperature Temperature Range for Operation -40掳C to +85掳C
Storage Temperature Temperature Range for Storage -65掳C to +150掳C
Package Type Package Style SOIC-8, PDIP-8

Instructions for Use:

  1. Power Supply Connection: Connect the Vcc pin to the power supply voltage within the specified range and GND pin to ground.
  2. Signal Levels: Ensure that input signals do not exceed the maximum input voltage levels to avoid damage or incorrect operation.
  3. Propagation Delay Consideration: Account for the propagation delay in timing diagrams when designing circuits.
  4. Thermal Management: Operate within the specified temperature ranges to ensure reliable performance. For extended temperature environments, consider thermal management techniques.
  5. Handling Precautions: Handle with care to prevent electrostatic discharge (ESD) damage; follow ESD handling protocols.
  6. Installation: Ensure correct orientation during installation to prevent shorts or misconnections. Verify pin assignments before soldering.
(For reference only)

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