Details

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BUY AM29F800BB 70EF https://www.utsource.net/itm/p/12600235.html

Parameter	Description	Value
Device Type	Flash Memory	1 M x 8
Package	Plastic Leaded Chip Carrier (PLCC)	32-Pin
Supply Voltage (Vcc)	Operating Voltage	2.7V to 3.6V
Programming Voltage	Vpp for Programming	Not Required (Single Supply)
Data Retention	Minimum Data Retention Time	10 Years
Endurance	Program/Erase Cycles per Block	100,000
Access Time	Typical Access Time for Read Operations	70 ns
Program Time	Typical Time for Programming a Byte	500 渭s
Erase Time	Typical Time for Erasing a Sector	4 ms
Operating Temperature	Industrial Temperature Range	-40掳C to +85掳C
Storage Temperature	Non-Operating Temperature Range	-65掳C to +150掳C
Organization	Memory Organization	1 M x 8
Block Structure	Number of Blocks and Size	16 Blocks of 64 K x 8 each
Pin Configuration	Pin Assignments	Refer to Datasheet
Power Consumption	Active Mode (Typical)	150 mW
Standby Current	Standby Mode (Typical)	1 渭A

Instructions for Use

1. Power Supply:

   • Connect Vcc to a stable power supply within the range of 2.7V to 3.6V.
   • Connect Vss to ground.

2. Addressing:

   • Apply the appropriate address lines (A0-A19) to select the memory location.

3. Data Input/Output:

   • Connect the data lines (D0-D7) to the microcontroller or processor for reading and writing data.

4. Control Signals:

   • Chip Select (CS#): Low to enable the device.
   • Output Enable (OE#): Low to enable read operations.
   • Write Enable (WE#): Low to initiate write operations.
   • Program/Erased (P/E#): Used for programming and erase operations. Refer to the specific programming and erase sequences in the datasheet.

5. Programming:

   • To program a byte, set CS# and WE# low, apply the address and data, and then set WE# high.
   • The typical time for programming a byte is 500 渭s.

6. Erase:

   • To erase a block, set CS# and P/E# low, apply the block address, and then follow the specific erase sequence detailed in the datasheet.
   • The typical time for erasing a sector is 4 ms.

7. Read Operations:

   • Set CS# and OE# low to enable read operations.
   • Apply the address and the data will be available on the data lines after the access time (70 ns).

8. Standby Mode:

   • To enter standby mode, set CS# high. The device will consume minimal power (1 渭A typical).

9. Handling:

   • Handle the device with care to avoid electrostatic discharge (ESD) damage.
   • Ensure proper heat sinking if operating at high temperatures or under heavy load conditions.

For detailed timing diagrams and specific programming/erase sequences, refer to the AM29F800BB 70EF datasheet.

(For reference only)