Details

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BUY AO4264 https://www.utsource.net/itm/p/12600283.html

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Drain-Source On-State Resistance	RDS(on)	VGS = 10V, ID = 4A	-	5.5	-	m惟
Gate-Source Voltage	VGS(th)	ID = 250渭A, IG = 1mA	0.8	-	2.0	V
Continuous Drain Current	ID	Tc = 25掳C	-	4.0	-	A
Pulse Drain Current	IDM	Tch = 1ms, Rep Rate = 100Hz	-	9.0	-	A
Power Dissipation	PD	Ta = 25掳C	-	-	0.7	W
Junction Temperature	TJ	-	-	-	150	掳C
Storage Temperature Range	Tstg	-	-55	-	150	掳C

Instructions for AO4264:

1. Handling and Storage:

   • Store in a dry, cool place to avoid moisture damage.
   • Handle with care to prevent static discharge which can damage the MOSFET.

2. Installation:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Follow correct soldering techniques to avoid thermal stress on the device.

3. Operation:

   • Do not exceed the maximum ratings listed in the parameter table.
   • For optimal performance, operate within the specified temperature range.
   • Ensure gate-source voltage (VGS) does not exceed the threshold limits to prevent damage.

4. Testing:

   • Use appropriate test equipment calibrated to industry standards.
   • Test under controlled conditions to ensure accurate measurement of parameters like RDS(on) and VGS(th).

(For reference only)