Details

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BUY MJE3055 https://www.utsource.net/itm/p/12600294.html

Parameter	Symbol	Value	Unit
Collector-Emitter Voltage	VCE	60	V
Emitter-Base Voltage	VEB	5	V
Collector Current	IC	1500	mA
Power Dissipation	PT	65	W
Storage Temperature	TSTG	-65 to 150	掳C
Operating Junction Temperature	TJ	-65 to 150	掳C
Transition Frequency	fT	2.5	MHz
DC Current Gain (min)	hFE	10	-
DC Current Gain (max)	hFE	70	-

Instructions for Use:

1. Handling Precautions:

   • Avoid exposing the MJE3055 to temperatures outside its specified operating range.
   • Handle the device with care to avoid mechanical damage.

2. Mounting:

   • Ensure proper heat sinking to manage power dissipation effectively.
   • Use insulated mounting hardware to prevent electrical shorts.

3. Biasing:

   • Set the base current (I_B) to achieve the desired collector current (I_C) based on the DC current gain (h_FE).
   • Use a resistor in series with the base to limit current and protect the transistor.

4. Protection:

   • Include a reverse-biased diode across the collector and emitter to protect against voltage spikes.
   • Consider using a transient voltage suppressor (TVS) diode for additional protection.

5. Testing:

   • Test the transistor in a controlled environment to ensure it meets the specified parameters.
   • Use a multimeter to check continuity and resistance values to verify connections.

6. Storage:

   • Store the MJE3055 in a dry, cool place to prevent moisture damage.
   • Keep the device in anti-static packaging to avoid static discharge damage.

7. Soldering:

   • Use a temperature-controlled soldering iron to avoid overheating the device.
   • Ensure the solder joints are clean and free from cold solder joints or bridges.

8. Troubleshooting:

   • If the transistor fails, check for overvoltage, overcurrent, or overheating conditions.
   • Verify that all components in the circuit are functioning correctly.

(For reference only)