Details

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BUY 2SD1207T-AE https://www.utsource.net/itm/p/12600321.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Collector-Emitter Voltage	VCEO	-	-	800	V	IC = 0.1 × ITM, Tj = 25°C
Emitter-Collector Voltage	VECE	-	-	800	V	IC = 0.1 × ITM, Tj = 25°C
Base-Emitter Voltage	VBE	-4.5	-	-3.5	V	IC = -5mA, Tj = 25°C
Continuous Collector Current	IC	-	-	15	A	Tc = 25°C
Pulse Collector Current	ICM	-	-	30	A	tp = 1ms, Tj = 25°C
Power Dissipation	PD	-	-	90	W	Tc = 25°C
Junction Temperature	Tj	-55	-	150	°C	-
Storage Temperature	Tstg	-55	-	150	°C	-

Instructions for Use:

1. Handling Precautions: The 2SD1207T-AE is sensitive to electrostatic discharge (ESD). Use appropriate ESD protection measures during handling and installation.
2. Mounting: Ensure proper heat sinking when operating at high power levels to maintain junction temperature within specified limits.
3. Biasing: Carefully set the base current to achieve desired operation without exceeding maximum ratings.
4. Testing: During testing, do not exceed the maximum collector-emitter voltage or collector current as it can lead to device failure.
5. Storage: Store in a dry environment within the specified storage temperature range to avoid damage.
6. Soldering: Follow recommended soldering profiles to prevent thermal shock which can damage the device.

(For reference only)