Details

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BUY MJE15032G/MJE15033G https://www.utsource.net/itm/p/12600747.html

Parameter	MJE15032G	MJE15033G
Type	NPN Darlington Transistor	PNP Darlington Transistor
Collector-Emitter Voltage (Vceo)	80 V	80 V
Emitter-Base Voltage (Veb) (Max)	6.5 V	6.5 V
Collector Current (Ic) (Continuous)	5 A	5 A
Power Dissipation (Ptot) (Max)	65 W	65 W
Storage Temperature Range (Tstg)	-55掳C to +150掳C	-55掳C to +150掳C
Operating Junction Temperature (Tj)	-55掳C to +150掳C	-55掳C to +150掳C
Current Gain (hFE) (Min/Typ/Max)	1000/3000/5000	1000/3000/5000
Transition Frequency (ft)	1 MHz	1 MHz
Collector-Emitter Saturation Voltage (Vcesat) (Typ)	1.2 V at Ic = 1 A, Ib = 100 mA	1.2 V at Ic = 1 A, Ib = 100 mA
Base-Emitter Saturation Voltage (Vbesat) (Typ)	1.9 V at Ic = 1 A, Ib = 100 mA	1.9 V at Ic = 1 A, Ib = 100 mA
Thermal Resistance (Rth,j-c) (Max)	1.25 掳C/W	1.25 掳C/W
Package	TO-220	TO-220

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within the specified range.
   • Use a thermal compound between the transistor and the heatsink for better thermal conductivity.

2. Biasing:

   • For the MJE15032G (NPN), apply a positive base current relative to the emitter to turn on the transistor.
   • For the MJE15033G (PNP), apply a negative base current relative to the emitter to turn on the transistor.
   • Ensure that the base current is sufficient to achieve the desired collector current but does not exceed the maximum ratings.

3. Protection:

   • Use appropriate current-limiting resistors to protect the base-emitter junction from overcurrent.
   • Consider using a flyback diode across inductive loads to protect against voltage spikes.

4. Storage:

   • Store in a dry, cool place to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads and package.

5. Testing:

   • Before mounting, test the transistors for short circuits or open circuits using a multimeter.
   • Verify the correct operation by measuring the collector-emitter voltage and current under load conditions.

6. Soldering:

   • Use a low-temperature soldering iron to avoid overheating the transistor.
   • Ensure that the leads are properly tinned and securely soldered to the PCB.

7. Dissipation:

   • Monitor the temperature of the heatsink during operation to ensure it remains within safe limits.
   • If the device is operating near its maximum power dissipation, consider increasing the heatsink size or improving airflow.

By following these guidelines, you can ensure reliable and efficient operation of the MJE15032G and MJE15033G transistors in your circuit designs.

(For reference only)