Details

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BUY FQPF8N80C https://www.utsource.net/itm/p/12601117.html

Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	800	-	V
Gate-Source Voltage	VGS	-20	-	20	V
Continuous Drain Current (TC = 25掳C)	ID	-	8.0	-	A
Continuous Drain Current (TC = 100掳C)	ID	-	4.7	-	A
Pulse Drain Current (tp = 10 渭s, IGT = 6 V)	IDM	-	24	-	A
Total Power Dissipation (TC = 25掳C)	PTOT	-	140	-	W
Total Power Dissipation (TC = 100掳C)	PTOT	-	50	-	W
Junction Temperature	TJ	-	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R胃JC	-	1.2	-	掳C/W
Gate Charge	QG	-	33	-	nC	VGS = 10 V, ID = 8 A
Input Capacitance	Ciss	-	1450	-	pF	VDS = 400 V, f = 1 MHz
Output Capacitance	Coss	-	150	-	pF	VDS = 400 V, f = 1 MHz
Reverse Transfer Capacitance	Crss	-	40	-	pF	VDS = 400 V, f = 1 MHz
Turn-On Delay Time	td(on)	-	59	-	ns	VGS = 10 V, ID = 8 A, Rg = 2 惟
Rise Time	tr	-	64	-	ns	VGS = 10 V, ID = 8 A, Rg = 2 惟
Turn-Off Delay Time	td(off)	-	37	-	ns	VGS = 10 V, ID = 8 A, Rg = 2 惟
Fall Time	tf	-	42	-	ns	VGS = 10 V, ID = 8 A, Rg = 2 惟

Instructions for Use:

1. Mounting and Handling:

   • Handle the device with care to avoid mechanical damage.
   • Ensure proper heat sinking to manage thermal resistance and maintain junction temperature within safe limits.

2. Electrical Connections:

   • Connect the drain (D), source (S), and gate (G) terminals correctly.
   • Use appropriate gate resistors to control switching speed and reduce electromagnetic interference (EMI).

3. Operating Conditions:

   • Do not exceed the maximum ratings for drain-source voltage, gate-source voltage, and continuous drain current.
   • Ensure that the total power dissipation does not exceed the specified limits at the given case temperature.

4. Thermal Management:

   • Use a heatsink or other cooling methods to keep the junction temperature below 150掳C.
   • Consider the thermal resistance (R_胃JC) when designing the cooling system.

5. Gate Drive:

   • Apply a sufficient gate drive voltage to ensure full enhancement of the MOSFET.
   • Avoid applying excessive gate voltage to prevent damage to the gate oxide.

6. Storage and Transportation:

   • Store the device in a dry, cool place away from direct sunlight.
   • Follow ESD (Electrostatic Discharge) precautions during handling and installation.

7. Testing and Troubleshooting:

   • Test the device under controlled conditions to ensure it meets the specified parameters.
   • If issues arise, check connections, power supply, and thermal management.

By following these guidelines, you can ensure reliable operation and longevity of the FQPF8N80C MOSFET.

(For reference only)