Details

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BUY SIVP0104N2 https://www.utsource.net/itm/p/12601129.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-	-	100	V	-
Gate-Source Voltage	VGS	-10	-	4	V	-
Continuous Drain Current	ID	-	4	-	A	TC = 25掳C
Continuous Drain Current	ID	-	1.8	-	A	TC = 70掳C
Pulse Drain Current	IDpeak	-	12	-	A	tp = 10 渭s, IG = 5 A
Gate Charge	QG	-	20	-	nC	VGS = 4 V
Input Capacitance	Ciss	-	360	-	pF	VDS = 10 V
Output Capacitance	Coss	-	90	-	pF	VDS = 10 V
Reverse Transfer Capacitance	Crss	-	20	-	pF	VDS = 10 V
On-State Resistance	RDS(on)	-	0.7	-	惟	VGS = 4 V, ID = 4 A, TC = 25掳C
On-State Resistance	RDS(on)	-	1.1	-	惟	VGS = 4 V, ID = 4 A, TC = 70掳C
Threshold Voltage	VGS(th)	1.0	1.5	2.0	V	ID = 250 渭A
Total Power Dissipation	PTOT	-	-	2.8	W	TC = 25掳C
Junction Temperature	TJ	-	-	150	掳C	-
Storage Temperature	TSTG	-55	-	150	掳C	-

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid damage to the leads or the body.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure that the device is mounted on a suitable heatsink if operating at high power levels.
   • Follow recommended soldering profiles to avoid thermal shock and damage.

3. Biasing:

   • Apply the gate-source voltage (V_GS) within the specified limits to prevent gate oxide breakdown.
   • Ensure that the drain-source voltage (V_DS) does not exceed the maximum rating to avoid device failure.

4. Operation:

   • Operate the device within the specified temperature range to ensure reliable performance.
   • Monitor the junction temperature (T_J) to avoid exceeding the maximum limit, which can cause permanent damage.

5. Testing:

   • Use appropriate test equipment and methods to verify the device parameters.
   • Refer to the datasheet for specific test conditions and procedures.

6. Storage:

   • Store the device in a dry, cool place to prevent moisture damage.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

(For reference only)