Details

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BUY MJE350 https://www.utsource.net/itm/p/12602715.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	VCE	-	-	30	V
Emitter-Base Voltage	VEB	-	-	5	V	Reverse polarity
Collector Current	IC	-	150	-	mA	Continuous
Power Dissipation	PT	-	-	625	mW	@ TA = 25掳C
Storage Temperature Range	TSTG	-65	-	150	掳C
Operating Junction Temperature	TJ	-65	-	150	掳C
Base-Emitter Saturation Voltage	VBE(sat)	-	1.8	2.8	V	IC = 150 mA, IB = 15 mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.7	1.5	V	IC = 150 mA, IB = 15 mA
DC Current Gain	hFE	10	50	150	-	IC = 150 mA, VCE = 10 V
Transition Frequency	fT	-	20	-	MHz

Instructions for Using MJE350:

1. Handling and Storage:

   • Store in a dry environment to prevent moisture damage.
   • Handle with care to avoid mechanical stress on the leads.

2. Mounting:

   • Ensure proper heat sinking if operating near maximum power dissipation.
   • Use appropriate mounting hardware to secure the device.

3. Biasing:

   • Ensure the base-emitter voltage (V_EB) is within the specified limits to avoid reverse breakdown.
   • Use a current-limiting resistor in series with the base to control the base current (I_B).

4. Operation:

   • Do not exceed the maximum collector current (I_C) or power dissipation (P_T) to prevent thermal runaway.
   • Operate within the specified temperature range to ensure reliable performance.

5. Testing:

   • Use a multimeter to check for continuity and resistance between the leads.
   • Test the device in a controlled circuit to verify its parameters.

6. Safety:

   • Always disconnect power before making any connections or adjustments.
   • Use appropriate safety equipment when handling high voltages.

By following these guidelines, you can ensure optimal performance and longevity of the MJE350 transistor.

(For reference only)