Details

---

BUY STGW30NC60WD https://www.utsource.net/itm/p/12602738.html

Parameter	Symbol	Min	Typ	Max	Unit	Notes
Collector-Emitter Voltage	Vceo	-	-	600	V
Collector-Base Voltage	Vcbo	-	-	650	V
Emitter-Base Voltage	Vebo	-	-	7	V
Continuous Collector Current	Ic	-	30	-	A
Collector-Emitter Saturation Voltage	Vcesat	1.8	2.0	2.5	V @ Ic = 30A, Vge = 15V
Gate-Emitter Threshold Voltage	Vgsth	2.5	3.5	4.5	V @ Ic = 1A, Tj = 25掳C
Total Power Dissipation	Ptot	-	-	300	W
Junction Temperature	Tj	-	-	175	掳C
Storage Temperature Range	Tstg	-55	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • Handle the device with care to avoid mechanical damage.
   • Avoid exposing the device to excessive static electricity to prevent damage to the gate.

2. Mounting:

   • Ensure proper heat dissipation by using a heatsink or heat spreader.
   • Tighten the mounting screws to the recommended torque to ensure good thermal contact.

3. Electrical Connections:

   • Connect the collector (C), emitter (E), and gate (G) terminals correctly.
   • Use short, low-inductance leads to minimize parasitic inductance.

4. Operational Parameters:

   • Do not exceed the maximum ratings listed in the table.
   • Operate within the specified temperature range to ensure reliable performance.

5. Gate Drive:

   • Apply a gate-emitter voltage (Vge) of at least 15V for full turn-on.
   • Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.

6. Thermal Management:

   • Monitor the junction temperature (Tj) to ensure it does not exceed 175掳C.
   • Use thermal paste or thermal interface materials to enhance heat transfer between the device and the heatsink.

7. Storage:

   • Store the device in a dry, cool place away from direct sunlight.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

8. Testing:

   • Before installing the device in a circuit, perform a continuity test to ensure there are no short circuits or open circuits.
   • Test the device under controlled conditions to verify its performance parameters.

(For reference only)