BTA20-800CW

BTA20-800CW

Category: Transistors

Specifications
Details

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Parameter Symbol Min Typical Max Unit Conditions
Rated On-State Current IT(RMS) - 20 - A Tc=40°C, sine wave AC
Peak On-State Current ITSM - 300 - A tp=1ms, sin 120°
Repetitive Peak Off-State Voltage VDRM 800 - - V sine wave, Tj=25°C
Non-Repetitive Peak Off-State Voltage VRRM 800 - - V tp≤10ms, sin 120°
Gate Trigger Current IGT 10 - 50 mA VGT=4V
Holding Current IH 5 - 50 mA VTM=1.5V
Power Dissipation PD - - 110 W Tc=40°C
Junction Temperature TJ -55 - 125 °C -
Storage Temperature TSTG -55 - 150 °C -

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Handle with care to avoid damage to the sensitive gate terminal.
  2. Circuit Design Considerations:

    • Ensure that the RMS current does not exceed 20A to prevent overheating.
    • Design the circuit to limit peak transient currents to below 300A for reliable operation.
    • Keep operating voltage below 800V to avoid exceeding the maximum repetitive peak off-state voltage.
  3. Gate Drive Requirements:

    • Provide a gate trigger current between 10mA and 50mA at 4V to ensure reliable turn-on.
    • Maintain holding current above 5mA to keep the device in the on-state.
  4. Thermal Management:

    • Monitor junction temperature to ensure it remains within the -55°C to 125°C range.
    • Use appropriate cooling methods if operating near the upper temperature limit.
  5. Storage:

    • Store in a dry environment with temperatures between -55°C and 150°C.
  6. Safety Precautions:

    • Always disconnect power before handling or servicing the device.
    • Use protective equipment when working with high voltages and currents.
(For reference only)

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