Details

---

BUY BTA08-800 https://www.utsource.net/itm/p/12602740.html

Parameter	Symbol	Min	Typical	Max	Unit	Condition
Rated ON-state current	IT(RMS)	-	8	-	A	Tc=40°C
Peak ON-state current	ITSM	-	80	-	A	Pulse width ≤ 1ms, duty ≤ 2%
ON-state voltage drop	VT	0.9	-	1.2	V	IT(RMS) = 8A, Tc=40°C
Holding current	IH	-	5	15	mA	Tj=25°C
Gate trigger current	IGT	5	-	50	mA	VGT=5V, Tj=25°C
Gate trigger voltage	VGT	0.6	-	1.5	V	IGT=5mA, Tj=25°C
Turn-off time	t(off)	-	3.5	7	μs	ITSM=80A, VDRM=400V, IG=0A
Junction temperature	Tj	-55	-	125	°C	Storage and operation

Instructions for BTA08-800:

1. Mounting and Heat Dissipation:

   • Ensure adequate heat dissipation when operating at high currents to prevent overheating.
   • Use a heat sink if necessary, especially when the ambient temperature exceeds 40°C.

2. Gate Drive Requirements:

   • Provide sufficient gate current (IGT) to ensure reliable triggering.
   • The gate voltage (VGT) should be within the specified range to avoid damage or unreliable operation.

3. Current Limitations:

   • Do not exceed the rated RMS current (IT(RMS)) or peak surge current (ITSM) as this can lead to device failure.
   • Be mindful of the holding current (IH) to ensure that the device remains in the conducting state once triggered.

4. Temperature Considerations:

   • Monitor the junction temperature (Tj) to ensure it stays within operational limits (-55°C to +125°C).
   • Avoid exceeding the maximum junction temperature to prevent thermal runaway.

5. Pulse Width and Duty Cycle:

   • For pulse applications, adhere to the specified pulse width and duty cycle limitations to prevent overheating or excessive power dissipation.

6. Storage Conditions:

   • Store the device in a cool, dry place away from direct sunlight and corrosive environments.
   • Observe anti-static precautions during handling to prevent damage from electrostatic discharge (ESD).

(For reference only)