Details

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BUY 2N5459 https://www.utsource.net/itm/p/12602918.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V(BR)CEO	-	-	70	V
Emitter-Base Voltage	V(BR)EBO	-	-	7	V
Collector Current	IC	-	-	200	mA
Power Dissipation	PD	-	-	350	mW
Forward Transconductance	gm	1000	-	-	渭S
Transition Frequency	fT	100	-	-	MHz
Storage Temperature Range	Tstg	-65	-	150	掳C
Operating Temperature Range	Tos	-65	-	150	掳C

Instructions for Use:

1. Handling Precautions:

   • The 2N5459 is sensitive to electrostatic discharge (ESD). Use proper anti-static precautions when handling.

2. Mounting:

   • Ensure the device is mounted in a way that allows adequate heat dissipation if operating near its maximum power dissipation.

3. Biasing:

   • When biasing the transistor, ensure the base current is sufficient to keep the transistor in the desired mode of operation (cut-off, active, or saturation).

4. Operating Limits:

   • Do not exceed the maximum ratings listed in the table to avoid damaging the device.
   • Pay special attention to the collector-emitter voltage and power dissipation limits.

5. Storage:

   • Store the device in a dry environment within the temperature range specified to prevent damage.

6. Testing:

   • For testing purposes, use low current and voltage levels initially to ensure correct operation before applying higher values.

(For reference only)