Details

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BUY AT28HC256E-12SI https://www.utsource.net/itm/p/12602951.html

Parameter	Description	Value	Unit
Device Type	Non-Volatile Memory	256K x 8-bit Flash Memory	-
Package	Package Type	24-Pin SSOP (Shrink Small Outline Package)	-
Operating Voltage (Vcc)	Supply Voltage Range	2.7 to 5.5	V
Standby Current (ISB)	Power Consumption in Standby Mode	1	μA
Active Current (IAV)	Power Consumption in Active Mode	10	mA
Write Cycle Time (tWC)	Time Required for a Complete Write Operation	3	ms
Erase Cycle Time (tEC)	Time Required for a Complete Erase Operation	1	s
Data Retention	Guaranteed Data Retention Time	10	years
Endurance	Number of Program/Erase Cycles	1,000,000	cycles
Operating Temperature (Toper)	Temperature Range for Normal Operation	-40 to +85	°C
Storage Temperature (Tstg)	Temperature Range for Storage	-65 to +150	°C
Access Time (tAC)	Time from Address Valid to Data Valid	125	ns
Output Drive Capability	Maximum Output Current per Pin	±25	mA

Instructions for Use:

1. Power Supply:

   • Ensure that the supply voltage (Vcc) is within the specified range of 2.7V to 5.5V.
   • Connect the ground pin (GND) to a stable ground reference.

2. Addressing:

   • The device has 19 address lines (A0-A18) to select one of the 256K memory locations.
   • Address lines should be stable before the access time (tAC).

3. Data I/O:

   • The device has 8 data lines (D0-D7) for reading and writing data.
   • Data lines should be driven by a suitable logic level compatible with the Vcc.

4. Control Signals:

   • Chip Select (CS): Active low signal to enable the device.
   • Output Enable (OE): Active low signal to enable data output.
   • Write Enable (WE): Active low signal to initiate a write operation.
   • Write Protect (WP): Active low signal to prevent accidental writes.

5. Write Operation:

   • Set CS and WP low.
   • Apply the desired address to the address lines.
   • Set WE low to start the write cycle.
   • Maintain WE low for at least the write cycle time (tWC).
   • Set WE high to complete the write cycle.

6. Read Operation:

   • Set CS and OE low.
   • Apply the desired address to the address lines.
   • Data will be available on the data lines after the access time (tAC).

7. Erase Operation:

   • The entire chip can be erased using a specific sequence of control signals and voltages.
   • Refer to the device datasheet for detailed erase sequence and timing requirements.

8. Standby Mode:

   • To enter standby mode, set CS high.
   • The device will consume minimal power in this mode.

9. Handling and Storage:

   • Store the device in a dry environment within the specified storage temperature range.
   • Handle the device with care to avoid electrostatic discharge (ESD) damage.

10. Endurance and Data Retention:

    • The device is rated for 1,000,000 program/erase cycles.
    • Data retention is guaranteed for up to 10 years under normal operating conditions.

(For reference only)