Details

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BUY IKCM20L60GA https://www.utsource.net/itm/p/12603231.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	V CES	-	-	600	V
Emitter-Collector Voltage	V ECS	-	-	600	V
Gate-Emitter Voltage	V GES	-15	-	15	V
Continuous Collector Current	I C	-	20	-	A
Pulse Collector Current (t = 10 ms, duty cycle 1/100)	I CM	-	80	-	A
Power Dissipation	P TOT	-	-	300	W
Junction Temperature	T J	-55	-	175	掳C
Storage Temperature	T STG	-55	-	150	掳C
Thermal Resistance, Junction to Case	R 胃JC	-	0.4	-	K/W

Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use a thermal compound between the device and the heat sink for efficient heat dissipation.

2. Biasing:

   • Apply gate-emitter voltage (V GE) within the specified range to avoid damage.
   • Use appropriate gate resistors to control turn-on and turn-off times, reducing switching losses.

3. Current Handling:

   • Do not exceed the continuous collector current (I C) or pulse collector current (I CM) ratings.
   • For high current applications, consider parallel operation with multiple devices.

4. Thermal Management:

   • Monitor the junction temperature (T J) to ensure it remains below the maximum rating.
   • Use forced air cooling or liquid cooling if necessary to manage heat effectively.

5. Storage:

   • Store the device in a dry, cool environment to prevent moisture damage.
   • Avoid exposure to temperatures outside the storage temperature range (T STG).

6. Handling:

   • Handle the device with care to avoid mechanical stress.
   • Use proper ESD protection to prevent damage from static electricity.

7. Testing:

   • Perform initial testing at reduced power levels to verify correct operation.
   • Regularly inspect the device for signs of wear or damage during operation.

(For reference only)