Details

---

BUY FQD1N80TM-VB https://www.utsource.net/itm/p/12603549.html

Parameter	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Voltage	VDS	-80		80	V
Gate-Source Voltage	VGS	-12		20	V
Continuous Drain Current	ID		0.4		A	TC = 25°C
Pulse Drain Current	IDM		3.6		A	tp = 10ms, TC = 25°C
RDS(on)	RDS(on)		1.2		Ω	VGS = 10V, ID = 0.4A
Input Capacitance	Ciss		70		pF	VDS = 10V, VGS = 0V
Output Capacitance	Coss		20		pF	VDS = 10V, VGS = 0V
Reverse Transfer Capacitance	Crss		12		pF	VDS = 10V, VGS = 0V
Total Gate Charge	Qg		6		nC	VDS = 10V, VGS = 10V

Instructions for FQD1N80TM-VB:

1. Handling Precautions:

   • The device is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling.
   • Avoid exceeding the maximum ratings listed in the table.

2. Mounting and Soldering:

   • Ensure that the mounting surface is clean and free of contaminants.
   • Follow standard soldering procedures suitable for surface-mount devices (SMD).

3. Operation:

   • Operate within the specified temperature range to avoid thermal damage.
   • Keep gate-source voltage (VGS) within the limits to prevent gate oxide damage.

4. Testing:

   • For accurate testing, ensure that all test conditions match those specified in the parameter table.
   • Use appropriate test equipment to measure parameters like RDS(on), capacitances, and currents.

5. Storage:

   • Store in a dry, cool place away from direct sunlight.
   • If stored for extended periods, reflow the components before use to ensure reliability.

(For reference only)