Details
BUY UM82C206L https://www.utsource.net/itm/p/12603550.html
| Parameter | Description | Value/Range |
|---|---|---|
| Device Type | CMOS EPROM (Electrically Programmable Read-Only Memory) | |
| Capacity | Memory size | 2 Kbits (256 x 8) |
| Vcc Operating Voltage | Supply voltage range | 2.7 V to 5.5 V |
| Operating Temperature | Temperature range for operation | -40掳C to +85掳C |
| Data Retention | Guaranteed data retention time | 10 years |
| Programming Voltage | Voltage required for programming | Vpp = 12.5 V 卤 0.5 V |
| Access Time | Time required to access data | 250 ns typical |
| Package Type | Types of packages available | DIP, SOIC |
| Write Cycle Time | Minimum time between write operations | 8 ms |
Instructions:
- Power Supply: Ensure the power supply voltage (Vcc) is within the specified operating range of 2.7 V to 5.5 V.
- Programming: Apply a programming voltage (Vpp) of 12.5 V 卤 0.5 V during the write cycle. The write cycle time should be at least 8 ms between consecutive writes.
- Temperature Consideration: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.
- Handling Care: This device is sensitive to electrostatic discharge (ESD); handle with care and use appropriate ESD protection measures.
- Storage: Store in a dry environment and observe the data retention period of 10 years for reliable data integrity.
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