UM82C206L

UM82C206L


Specifications
Details

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Parameter Description Value/Range
Device Type CMOS EPROM (Electrically Programmable Read-Only Memory)
Capacity Memory size 2 Kbits (256 x 8)
Vcc Operating Voltage Supply voltage range 2.7 V to 5.5 V
Operating Temperature Temperature range for operation -40掳C to +85掳C
Data Retention Guaranteed data retention time 10 years
Programming Voltage Voltage required for programming Vpp = 12.5 V 卤 0.5 V
Access Time Time required to access data 250 ns typical
Package Type Types of packages available DIP, SOIC
Write Cycle Time Minimum time between write operations 8 ms

Instructions:

  1. Power Supply: Ensure the power supply voltage (Vcc) is within the specified operating range of 2.7 V to 5.5 V.
  2. Programming: Apply a programming voltage (Vpp) of 12.5 V 卤 0.5 V during the write cycle. The write cycle time should be at least 8 ms between consecutive writes.
  3. Temperature Consideration: Operate the device within the temperature range of -40掳C to +85掳C to ensure reliable performance.
  4. Handling Care: This device is sensitive to electrostatic discharge (ESD); handle with care and use appropriate ESD protection measures.
  5. Storage: Store in a dry environment and observe the data retention period of 10 years for reliable data integrity.
(For reference only)

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