MJE15031G

MJE15031G


Specifications
SKU
12603574
Details

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Parameter Symbol Min Typical Max Unit Conditions
Collector-Emitter Voltage VCEO - - 70 V IC = 1.5A, TC = 25掳C
Emitter-Collector Voltage VECC - - 70 V IE = 1.5A, TC = 25掳C
Base-Emitter Voltage VBE - 1.8 2.6 V IC = 1.5A, TC = 25掳C
Collector Current IC - - 1.5 A VCE = 30V
Base Current IB - - 0.15 A VCE = 30V
DC Current Gain hFE 20 70 200 - IC = 1.5A, VCE = 10V
Transition Frequency fT - 10 20 MHz IC = 1.5A, VCE = 10V
Power Dissipation PT - - 65 W TC = 25掳C
Junction Temperature TJ - - 150 掳C -
Storage Temperature TSTG -55 - 150 掳C -

Instructions for Use:

  1. Handling Precautions:

    • Handle the MJE15031G with care to avoid damage from electrostatic discharge (ESD).
    • Use appropriate ESD protection equipment such as wrist straps and grounded work surfaces.
  2. Mounting:

    • Ensure proper heat sinking to manage the power dissipation and maintain the junction temperature within safe limits.
    • Follow the recommended PCB layout guidelines to ensure optimal thermal performance.
  3. Biasing:

    • Set the base current (IB) appropriately to achieve the desired collector current (IC) and DC current gain (hFE).
    • Use a base resistor to limit the base current and prevent overdriving the transistor.
  4. Operating Conditions:

    • Do not exceed the maximum ratings for collector-emitter voltage (VCEO), emitter-collector voltage (VECC), collector current (IC), and power dissipation (PT).
    • Monitor the junction temperature (TJ) to ensure it does not exceed 150掳C.
  5. Storage:

    • Store the MJE15031G in a dry, cool place to prevent moisture damage.
    • Keep the device in its original packaging until ready for use to protect against static and physical damage.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the MJE15031G before installation.
    • Perform initial testing at low power levels to ensure the device is operating correctly.
  7. Troubleshooting:

    • If the transistor fails to operate as expected, check for proper biasing, correct connections, and any signs of overheating.
    • Replace the transistor if it shows signs of damage or if it fails to meet the specified parameters.
(For reference only)

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