Details

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Parameter	Symbol	Min	Typical	Max	Unit	Conditions
Maximum Repetitive Peak Off-State Voltage	VRRM	-	400	-	V
Maximum RMS Drain-to-Source Voltage	VDSM	-	400	-	V
Maximum Continuous Drain Current (Tc = 25掳C)	ID	-	2.0	-	A
Maximum Continuous Drain Current (Tc = 75掳C)	ID	-	1.3	-	A
Maximum Pulsed Drain Current (Tc = 25掳C)	ICM	-	8.0	-	A	tp = 10 渭s, duty cycle = 1/1000
Total Power Dissipation (Ta = 25掳C)	PD	-	60	-	W
Junction Temperature	TJ	-40	-	150	掳C
Storage Temperature Range	TSTG	-55	-	150	掳C
Forward Voltage at IF = 1.0 A	VF	-	0.95	-	V
Reverse Recovery Time	trr	-	65	-	ns	IF = 2 A, IR = 2 A
Diode Leakage Current at VR = 400 V, Ta = 25掳C	IR	-	1.0	-	渭A
Diode Leakage Current at VR = 400 V, Ta = 125掳C	IR	-	100	-	渭A

Instructions for Use:

1. Operating Voltage:

   • Ensure that the maximum repetitive peak off-state voltage (VRRM) does not exceed 400V.
   • The maximum RMS drain-to-source voltage (VDSM) should also not exceed 400V.

2. Current Handling:

   • For continuous operation at room temperature (25掳C), the maximum continuous drain current (ID) is 2.0A.
   • At higher temperatures (75掳C), the maximum continuous drain current reduces to 1.3A.
   • For pulsed applications, the maximum pulsed drain current (ICM) is 8.0A with a pulse width of 10 渭s and a duty cycle of 1/1000.

3. Power Dissipation:

   • The total power dissipation (PD) at room temperature (25掳C) should not exceed 60W.

4. Temperature Considerations:

   • The junction temperature (TJ) should be kept between -40掳C and 150掳C.
   • The storage temperature range (TSTG) is from -55掳C to 150掳C.

5. Forward Voltage:

   • The forward voltage (VF) at a current of 1.0A is typically 0.95V.

6. Reverse Recovery Time:

   • The reverse recovery time (trr) is typically 65ns when the forward current (IF) is 2A and the reverse current (IR) is 2A.

7. Leakage Current:

   • The diode leakage current (IR) at a reverse voltage (VR) of 400V and ambient temperature (Ta) of 25掳C is typically 1.0渭A.
   • At an ambient temperature of 125掳C, the leakage current increases to 100渭A.

8. Mounting and Handling:

   • Follow standard handling and mounting procedures to avoid mechanical stress and damage.
   • Ensure proper thermal management to keep the junction temperature within the specified range.

9. Electrostatic Discharge (ESD) Protection:

   • Handle the device with ESD protection measures to prevent damage from static electricity.

10. Circuit Design:

    • Design the circuit to ensure adequate heat sinking if operating at high power levels or in high ambient temperatures.
    • Use appropriate decoupling capacitors to stabilize the power supply and reduce noise.

(For reference only)