Details

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BUY 2N5447 https://www.utsource.net/itm/p/12603682.html

Parameter	Symbol	Min	Typ	Max	Unit
Collector-Emitter Voltage	VCEO	-	-	100	V
Collector-Base Voltage	VCBO	-	-	150	V
Emitter-Base Voltage	VEBO	-	-	5	V
Collector Current	IC	-	-	200	mA
Base Current	IB	-	-	5	mA
Power Dissipation	PT	-	-	350	mW
Forward Current Transfer Ratio	hFE	100	300	-	-
Storage Temperature Range	TSTG	-65	-	150	掳C
Operating Junction Temperature	TJ	-65	-	150	掳C

Instructions for Use:

1. Handling:

   • Avoid excessive mechanical stress during handling.
   • Use proper ESD (Electrostatic Discharge) protection when handling the device.

2. Mounting:

   • Ensure good thermal contact with the mounting surface to prevent overheating.
   • Use a heat sink if continuous high power dissipation is expected.

3. Biasing:

   • Ensure that the base current (I_B) is sufficient to fully saturate the transistor for switching applications.
   • For linear applications, operate within the active region by biasing the base-emitter junction properly.

4. Voltage and Current Ratings:

   • Do not exceed the maximum ratings for collector-emitter voltage (V_CEO), collector-base voltage (V_CBO), and emitter-base voltage (V_EBO).
   • Limit the collector current (I_C) and base current (I_B) to their respective maximum values.

5. Temperature:

   • Operate within the specified storage and operating temperature ranges to avoid damage.
   • Monitor the junction temperature (T_J) to ensure it does not exceed the maximum limit.

6. Testing:

   • Use appropriate test equipment and procedures to verify the performance of the transistor.
   • Follow standard testing guidelines to avoid damaging the device.

7. Storage:

   • Store the device in a dry, cool place away from direct sunlight and sources of heat.
   • Keep the device in its original packaging until ready for use to protect against static discharge.

(For reference only)